Program - CSSC-1 & 4th SiMat joint workshop
Wednesday, April 20th, 2022
Thursday, April 21st, 2022
Friday, April 22nd, 2022
Poster session
Wednesday, April 20th, 2022
| 11h00m | Registration | |
| 11h40m | Opening | |
| 12h00m | Detection of H in p-type silicon materials using FR-IR spectroscopy | |
| Erik Marstein | ||
| IFE, Norway | ||
| 12h40m | Growth of silicon single crystals with a diameter of 4 inch using the granulate crucible method | |
| R. Menzel, K. Dadzis, A. Nikiforova, N. Lorenz-Meyer, B. Faraji-Tajrishi, N. Abrosimov, H. Riemann | ||
| Leibniz-Institut für Kristallzüchtung | ||
| 13h00m-14h00m | Lunch | |
Novel monocrystalline materials | ||
| 14h00m | Oxygen, carbon and other interesting components of the first single crystal silicon ribbons pulled horizontally from a melt | |
| Nathan Stoddard, Jesse Appel, Alireza Pirnia, Cecilia Lee, Peter Kellerman and Parthiv Daggolu | ||
| Leading Edge Equipment Technologies | ||
| 14h40m | Twin formation in high-velocity Czochralski growth of photovoltaic silicon | |
| Xiang Lu, Shuai Yuan*, Xuegong Yu, Deren Yang | ||
| Zhejiang University, Hangzhou, China | ||
| 15h00m | Dislocation activation conditions and dynamics studied in situ by X-ray diffraction imaging in monocrystalline Si near the melting point | |
| Serge Neves Dias, Maike Becker, Hadjer Ouaddah, Isabelle Périchaud, Guillaume Reinhart, Nathalie Mangelinck-Noël, Gabrielle Regula* | ||
| Aix Marseille Univ, Université de Toulon, Marseille, France | ||
| 15h20m | Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals | |
| F.Sturm 1*, M. Trempa 1, G. Schuster 2, R. Hegermann 2, P. Götz 2, R. Wagner 3, G. Barroso 3, P. Meisner4, C. Reimann 1, J. Friedrich 1 | ||
| 1 Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany | ||
| 2 CVT GmbH & Co. KG, Romantische Strasse 18, 87642 Halblech, Germany | ||
| 3 Rauschert Heinersdorf-Pressig GmbH, Bahnhofstrasse 1, 96332 Pressig, Germany | ||
| 4 SGL Carbon GmbH, Drachenburgstrasse, 53170 Bonn, Germany | ||
| 15h40m-16h00m | Cofffee break | |
Defects in silicon | ||
| 16h00m | Kinetics of Light-Induced Instability in Bifacial N-Type Silicon Heterojunctions | |
| Brendan Wright | ||
| UNSW (Aus) | ||
| 16h20m | Characterisation of Striations in n-type Silicon Wafer Processed with Polysilicon Contacts | |
| Zhuangyi Zhou 1*, Fiacre Rougieux 1, Manjula Siriwardhana 2, Daniel MacDonald 2, Gianluca Coletti 1,3 | ||
| 1 School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Australia | ||
| 2 College of Engineering and Computer Science, Australian National University, Australia | ||
| 3 TNO Energy Transition, Westerduinweg 3, 1755 LE Petten, the Netherlands | ||
| 16h40m | A Study on Degradation Mechanisms in the Czochralski Grown Si Crystal for Solar Cell Applications | |
| Rasit Turan 1,2, Sercan Aslan 1,2, Mehmet Konyar 4, Nurhayat Yıldırım 4, Bulent Arıkan 1, Gence Bektaş 1,3, Hasan Hüseyin Canar 1,3, Salar Habibpur Sedani 1,3, Fırat Es 4, | ||
| 1 Middle East Technical University- Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, Turkey | ||
| 2 Department of Physics, Middle East Technical University (METU), Ankara, Turkey | ||
| 3Micro and Nanotechnology Program (MNT), Middle East Technical University (METU), Ankara, Turkey | ||
| 4 Kalyon PV Research and Development Center, Kalyon Güneş Teknolojileri Üretim A.Ş., 06909, Ankara, Turkey | ||
| 17h00m | Copper in compensated p-type and n-type Czochralski silicon: diffusivity, influence on the majority carrier density and mobility | |
| Guilherme Gaspar 1, Chiara Modanese 1, Sarah Bernardis 2, Nicolas Enjalbert 2, Lars Arnberg 1, Sebastien Dubois 2, Marisa Di Sabatino 1* | ||
| 1 Norwegian University of Science and Technology (NTNU), Department of Materials Science and Engineering, Trondheim, Norway | ||
| 2 Univ. Grenoble Alpes, (CEA), LITEN, Department for Solar Energy, National Institute of Solar Energy, France |
Thursday, April 21st, 2022
Directional solidfication, UMG and characterisation | ||
| 8h30m | Decomposition of small-angle grain boundaries during directional solidification of multicrystalline silicon | |
| Lu-Chung Chuang*, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara | ||
| Tohoku University, Japan | ||
| 9h00m | Towards Low-cost High-efficiency and Reliable Upgraded Metallurgical Silicon Solar Cells | |
| C. del Cañizo 1*, N. Dasilva-Villanueva 1, D. Fuertes Marrón 1, B. Arikan 2, H. H. Canar 2, R. Turan 2,3, G.Sánchez Plaza 4, L. Méndez 5, E. Forniés 5 | ||
| 1 Instituto de Energía Solar – Universidad Politécnica de Madrid, Avda. Complutense, 30, Madrid, Spain | ||
| 2 Center for Solar Energy Research and Applications (GÜNAM), Ankara, Turkey | ||
| 3 Department of Physics, Middle East Technical University, Ankara, Turkey | ||
| 4 Nanotechnology Center – Universidad Politécnica de Valencia, Camino de Vera, Valencia, Spain | ||
| *email: carlos.canizo@upm.es | ||
| 5 Aurinka PV Group, Marie Curie 19, Rivas-Vaciamadrid (Madrid), Spain | ||
| 9h20m | Adjustment of resistivity for phosphorus doped n-type multicrystalline silicon | |
| Iryna Buchovska*, Kaspars Dadzis, Natasha Dropka, Frank M. Kiessling | ||
| Leibniz-Institut für Kristallzüchtung (IKZ) | ||
| 9h40m | Growth rate-temperature gradient diagrams for control of grain structure in PV ingots | |
| Thierry Duffar 1,2* | ||
| 1 Univ. Grenoble Alpes, CNRS, Grenoble INP*, SIMAP, F-38000 Grenoble, France | ||
| * Institute of Engineering Univ. Grenoble Alpes | ||
| 2 Visiting Professor, Institute for Materials Research, Tohoku University, Sendai, Japan | ||
| 10h00m | Microscopic Charge Carrier Lifetime Mapping for Silicon Material Analysis | |
| Friedemann D. Heinz 1,2*, Maximilian Özkent 2, Clara Rittmann 2, Florian Schindler 2, Martin C. Schubert 2, Wolfram Kwapil 1,2, Stefan Glunz 1,2 | ||
| 1 Laboratory for Photovoltaic Energy Conversion, Department for Sustainable Systems Engineering | ||
| (INATECH), University Freiburg, Germany | ||
| 2 Fraunhofer Institute for Solar Energy Systems (ISE),Freiburg, Germany | ||
| 10h20m-11h40m | Coffee break +Poster session | |
| 11h40-13h00m | Panel discussionModerator: Gianluca Coletti, TNO, UNSW Speaker: Markus Fischer, Co-Chair, ITRPV Steering Committee Panel: João M. Serra, Faculdade de Ciências Universidade de Lisboa Nathan Stoddard, Leading Edge Equipment Technologies Peter Dold, Fraunhofer CSP Nurhayat Yıldırım, Kalyon PV Carlos del Cañizo, Instituto de Energía Solar – Universidad Politécnica de Madrid | |
| 14h00m | Afternoon tour and dinner | |
Friday, April 22nd, 2022
Impact of material properties on cell performance I | ||
| 8h20m | Auger parametrization for silicon PV | |
| Tim Niewelt | ||
| Fraunhofer ISE | ||
| Warwick University, UK | ||
| 9h00m | PERC-cells from 100% recycling-silicon from end-of-life PV-modules | |
| P. Dold 1, A. Obst 1, P. Henatsch 1, F. Zobel 1, S. Riepe 2, D. Wagenmann 2, E. Lohmüller 2, S. Lohmüller 2 | ||
| 1 Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Saale), Germany | ||
| 2 Fraunhofer Institute for Solar Energy Systems ISE, Germany | ||
| 9h20m | Developing advanced light-trapping structures for back-contact crystalline silicon solar cells by metal-assisted chemical etching | |
| David M. Pera, Ivo Costa, Filipe Serra, Gaspar Gaspar, Killian Lobato, João M. Serra, José A. Silva* | ||
| Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa, Portugal | ||
| 9h40m-10h00m | Coffee break | |
Impact of material properties on cell performance II | ||
| 10h00 | Bulk and interface defects limiting high-efficiency n-type solar cells | |
| Fiacre Rougieux | ||
| School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Australia | ||
| 10h40m | Gettering by polysilicon/oxide passivating contact structures | |
| AnYao Liu*, Zhongshu Yang, Jan Krügener, Frank Feldman, Jana-Isabelle Polzin, BerndSteinhauser, Sieu Pheng Phang, Daniel Macdonald | ||
| ANU, Australia | ||
| 11h00m | Alternative Cz Ingot squaring and cell cutting methodology for low temperature PV cell | |
| Mickael Albaric , S. Harrison, B. Martel, F.Dhainaut, T.Desrues | ||
| CEA, LITEN, Department of Solar Technologies, France | ||
| 11h20m | Closing | |
Poster session
| 1 | Rapid Characterization of Surface Damage Region using μ-PCD technique | |
| Ferenc Korsós1*, Krisztián Dávid1,2, András Bojtor1,2, Xueqian Dong3, Hao Deng4, Shasha Wang4, Chao Du4, Xiaobo Chen4 | ||
| 1 Semilab Co., Ltd., 4/A. Prielle K. str., Budapest, Hungary | ||
| 2 Budapest University of Technology and Economics, Budapest, Hungary | ||
| 3 Semilab Trade Shanghai Co., Ltd., Pudong, Shanghai (201210), P.R.China | ||
| 4 LONGi Green Energy Technology Co., Ltd., Xi’an, Shaanxi (710100), P.R China | ||
| 2 | Effect of Germanium Doping in Cast-Mono Silicon Ingots | |
| Aravind Subramanian1,2, Patricia Krenckel1*, Stephan Riepe1 | ||
| 1 Fraunhofer ISE, Heidenhofstrasse 2, Freiburg, Germany | ||
| 2 Albert-Ludwigs-Universität Freiburg, Hermann-Herder-Straße 5A, Freiburg, Germany | ||
| 3 | An attempt to correlate dislocation structures and distribution to macroscale lattice rotations in <100> cast-mono ingots | |
| Etienne Pihan1, Mickael Albaric1, Nathalie Mangelinck-Noël2 | ||
| 1Univ Grenoble Alpes, CEA-LITEN, DTS, LMPS, INES, F-73375 Le Bourget-du-Lac, France | ||
| 2Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397, Marseille, France | ||
| 4 | Deformation of the crystalline structure in silicon due to carbon contamination and effect on solidification | |
| H. Ouaddah1, I. Périchaud1, G. Regula1, G. Reinhart1, F. Guittonneau2, L. Barrallier2, T-N. Tran3, J. Baruchel3, N. Mangelinck Noël1* | ||
| 1Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397 Marseille, France | ||
| 2Arts et Métiers Institut de Technologie, HESEAM 2, Cours des Arts et Métiers, 13617, Aix-en-Provence France | ||
| 3 ESRF—The European Synchrotron, CS40220, 38043 Grenoble CEDEX 9, France | ||
| 5 | Temperature-Dependent Lifetime Measurements Using MW-PS in Contaminated Silicon | |
| Sarra Dehili, Cyril Leon, Damien Barakel, Olivier Palais* | ||
| Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397 Marseille, France | ||
| 6 | Imaging of stress fields and bulk defects in monocrystalline silicon ingots | |
| Tamas Brigancz1*, Zsombor Sánta1, Árpád Gyurita1, István Soczó1, Zoltán Kiss1, Ferenc Korsós1 | ||
| 1 Semilab Co. Ltd., 4/A. Prielle K. str., Budapest, Hungary | ||
| 7 | Oxygen diffusivity enhancement due to hydrogen- and light-soaking of silicon: A first principles modelling study | |
| Vítor José Babau Torres*, Paulo David Rodrigues Santos, José Pedro de Abreu Coutinho | ||
| Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal | ||
| 8 | Formation mechanism of H2 molecules in Si quenched from high temperatures (and its role in LeTID of solar silicon) | |
| Diana Gomes1*, Vladimir P. Markevich2, Anthony R. Peaker2, José Coutinho1 | ||
| 1 I3N, Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal | ||
| 2 Photon Science Institute and Department of Electrical and Electronic Engineering, The University of | ||
| Manchester, Manchester M13 9PL, United Kingdom | ||
| 9 | Subgrain boundary evolution and interaction with twin boundaries in a directionally solidified thin cast-mono sample | |
| Maike Becker1, Etienne Pihan2, Fabrice Guittonneau3, Gabrielle Regula1, Hadjer Ouaddah1, Guillaume Reinhart1, Laurent Barrallier3, Nathalie Mangelinck-Noël1* | ||
| 1 Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397, Marseille, France | ||
| 2 Univ. Grenoble Alpes, INES, CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France | ||
| 3 Arts et Métiers, Institute of Technology, HÉSAM Université, 2, Cours des Arts et Métiers, 13617, Aix-en-Provence, Cedex 1, France | ||
| 10 | Identification of Thermal Donor-rich Czochralski wafers using hyperspectral photoluminescence imaging in both n- and p-type materials | |
| T. Mehl1*, E. Olsen1, I. Burud1, J. Veirman2, M. Albaric2, W. Favre2 | ||
| 1 Norwegian University of Life Sciences (NMBU), Universitetstunet 3, NO-1433 Ås, Norway | ||
| 2 CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France | ||
| 11 | Numerical simulation analysis of the Silicon on Dust Substrate process | |
| Filipe Serra, José A. Silva, João M. Serra | ||
| Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa,Campo Grande Ed. C8, 1749-016 Lisboa, Portugal | ||
| 12 | Optical performance simulation of crystalline silicon substrates randomly textured by metal-assisted chemical etching | |
| David M. Pera, Ivo Costa, Filipe Serra, Guilherme Gaspar, Killian Lobato, João M. Serra, José A. Silva* | ||
| Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa, Campo Grande Ed. C8, 1749-016 Lisboa, Portugal | ||
| 13 | New cold crucible for silicon single crystal | |
| K. Zaidat1,*, H. Abouchi2, S. Al-Radi1,2, X. Han1, Fl. Baltaretu3, M. Al-Radi1,2, C. Garnier2, G. Hasan2, R. Ernst2, and A. Kharicha4 | ||
| 1 Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble, France | ||
| 2 CNRS, SIMAP, F-38000 Grenoble, France | ||
| 3 Technical University of Civil Engineering Bucharest, Romania | ||
| 4 Christian-Doppler Laboratory for Metallurgical Applications of Magnetohydrodnamics, Leobben, Austria | ||
| 14 | Controlling silicon laser melting and phosphorus doping at the nanoscale – towards scalable tunnel junctions for tandem solar cells | |
| K. Lobato, F. Serra. G. Gaspar and JM Serra | ||
| Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa,Campo Grande Ed. C8, 1749-016 Lisboa, Portugal |